650V XPT Gen5 Discrete IGBT
New Gen5 IGBT optimized for low, medium, and high-speed switching applications.
The "650V XPT Gen5 Discrete IGBT" is a product developed using unique XPT thin wafer technology and a new fifth-generation trench IGBT process. It features low thermal resistance, minimal energy loss, high-speed switching capability, low tail current, and high current density. Additionally, it has low gate charge, which helps reduce gate drive requirements. 【Benefits】 - Provides optimized switching classes A4, B4, and C4 to meet the switching frequency requirements of various applications. - Reduction in gate charge Qg decreases gate driver requirements. - Positive VCE(SAT) temperature coefficient facilitates parallel usage. - High power density with a maximum collector current capability of 220A at TC = 110℃. *For more details, please download the PDF or feel free to contact us.
- Company：Littelfuse ジャパン
- Price：Other
